摘要
多晶硅薄膜太阳电池因兼具低材料消耗、低成本、高稳定性及多晶硅薄膜微电子器件的成熟工艺而备受瞩目。对多晶硅薄膜太阳电池的结构和制备工艺流程进行了详细阐述,指出当前多晶硅薄膜太阳电池的关键研究方向,即衬底的选择和高质量多晶硅薄膜的实现。特别是针对高质量多晶硅薄膜的制备,系统地介绍了化学气相沉积(CVD)、磁控溅射(MS)、固相晶化(SPC)、激光晶化(LC)以及快速热退火(RTA)等制备方法的工作原理、特点和优劣。综合阐述了各项技术的发展现状,并对上述技术及其在多晶硅薄膜太阳电池中的应用前景进行了客观评述与展望。
Polycrystalline silicon（poly-Si） thin film solar cells are attracted much attention due to their low material consumption,low cost,high stability,and the mature technology of poly-Si thin film microelectronic devices.The structure and preparation processes of poly-Si thin film solar cells are reviewed in detail,and it is pointed out that the suitable substrate selection and high quality materials realization are the key research directions of poly-Si thin film solar cells at pre-sent.Then the principles,characteristics,advantages and disadvantages of the preparation me-thods are introduced systematically,including the chemical vapor deposition（CVD）,magnetron sputtering（MS）,solid-phase crystallization（SPC）,laser crystallization（LC） and rapid thermal annealing（RTA）.Finally,the development status of the technologies above is elaborated,and the application prospects of these methods in poly-Si thin film solar cells are reviewed objectively.
出处
《微纳电子技术》
CAS
北大核心
2013年第3期137-142,166,共7页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(61006150
61076051)
国家高技术研究发展计划(2011AA050507)
北京市自然科学基金资助项目(2102042)
中央高校基本科研业务费专项资金资助项目(10QG24)
