摘要
为了提高大面积pin单结集成型非晶硅太阳电池的特性,采用掺磷低温微晶化硅(n^+μc-Si)做电池的n^+层,结果使10×0cm^2电池的开路电压从8.5V以下提高到9.0V以上,填充因子从0.62提高到0.65。本文对n^+μc-Si材料的特性及用于太阳电池的实验情况做了详细的介绍,并对实验结果进行了讨论。
In order to improve the performance of the large area pin single junction integrated amorphous silicon solar cells,we have applied the p-doped μc-Si:H film to the n+ layer of 10×10cm2 amorphous silicon solar cells,increasing the open voltage from below 8.5V to above 9V and the fill factor from 0.62 to 0.65.The conversion efficiency of 8.55% is achived.In this paper the properties of p-doped μc-Si:H material and the experiments used on solar cells were introdnced.Finally the experiment results were discussed.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1991年第3期247-254,共8页
Acta Energiae Solaris Sinica
