期刊文献+

MgF_2/Se薄膜封装层对OLED性能及寿命的影响 被引量:5

Influence of MgF_2/Se film encapsulation layer on performance and lifetime of OLED
原文传递
导出
摘要 有机电致发光器件(OLEDs)在使用过程中,易受到空气中水汽、氧气及其它污染物的影响从而导致其工作寿命降低。本文将具有良好光透过率和热稳定性的MgF2薄膜与在水汽和氧气中具有良好稳定性的Se薄膜通过真空蒸镀制成复合薄膜作为OLEDs的封装层,以达到提高器件使用寿命的目的。器件各功能层蒸镀完成后,保持真空度(3×10-4 Pa)不变,在阴极表面蒸镀MgF2/Se薄膜封装层。比较了绿光OLED器件(器件结构为ITO/CuPc/NPB/Alq3:C-545T/Alq3/LiF/Al)封装前后的亮度-电压-电流密度特性、电致发光光谱及寿命。研究发现,经过MgF2/Se封装后,器件的电流密度-电压特性、亮度和发光光谱几乎没有受到影响,二者的光谱峰都在528nm处,色坐标(CIE)分别为(0.355 5,0.613 1)和(0.356 0,0.610 4),只是起亮电压由3V变为4V;器件的寿命由原来的175h变为300h,提高了1.7倍。因此,MgF2/Se薄膜是一种有效的OLEDs无机薄膜封装层。 Organic light emitting devices (OLEDs) are easy to be influenced by water vapor,oxygen of air and other pollutants,which leads to the reducing of their working life. In the paper, the MgF2 thin film with a good optical transmission and thermal stability and the Se thin film with a good stability in water vapor and oxygen were made in to composite thin film by vacuum evaporation as OLED encapsulation layer,and the lifetime of the device would be improved in expectation. The MgF2/Se thin film was vaporized on the cathode surface in the same conditon of vacuum (3× 10-4 Pa) after the deposition of functional layers in OLEDs was completed. The luminance-voltage-current densities and electroluminesce spectra of green OLEDs (the device structure is ITO/CuPc/NPB/Alq3 :C-545T/Alq3/LiF/A1. )before and after encapsulation are compared. The research shows that the current density-voltage and electroluminesce spectrum of OLEDs are scarcely influenced by MgF2/Se encapsulation layer and both of their spectra are at 528 nm,the color coordinates are (0. 355 5,0. 613 1) and (0. 356 0,0. 610 4) ,respectively, and the turn-on voltage is only changed from 3 V to 4 V. However, the lifetime of the device with MgF2/Se thin film is increased from 175 h to 300 h,about 1.7 times of the original. So the MgF2/Se thin film is an effective inorganic thin film encapsulation layer for OLEDs.
出处 《光电子.激光》 EI CAS CSCD 北大核心 2013年第3期535-538,共4页 Journal of Optoelectronics·Laser
基金 陕西省专利产业化(2005ZZ-04) 陕西省教育厅产业化(06JC23)资助项目
关键词 MGF2 SE 薄膜封装 寿命 MgF2/Se thin film encapsulatiom lifetime
  • 相关文献

参考文献4

二级参考文献53

  • 1邵作叶,郑喜凤,陈宇.平板显示器中的OLED[J].液晶与显示,2005,20(1):52-56. 被引量:62
  • 2赵晶,李平,王丹.单片机控制OLED显示全彩色静态图片和动态图像的系统设计[J].液晶与显示,2006,21(1):67-72. 被引量:19
  • 3罗潺,黄飞,杨伟,彭俊彪,曹镛.新型含硒杂环红光聚芴电解质的电致发光器件制备和研究[J].液晶与显示,2006,21(2):134-138. 被引量:8
  • 4丁桂英,姜文龙,王静,汪津,王立忠,韩强,王红梅,赵晓红.基于磷光材料的有机电致白光器件的研究进展[J].液晶与显示,2006,21(4):373-378. 被引量:1
  • 5Holmes R J,D'Andrade B W,Forrest S R,et al. Efficient,deep- blue organic electrophosphorescence by vip charge trapping [J].Appl. Phys. Lett. ,2003,83(18) : 3818-3820.
  • 6Weaver M S,Kwong R. C,Adamovich V A,et al. Recent ad- vances in phosphorescent OLEDs for small- and large-area-dis-play sizes[J]. J. Soc. Inf. Disp,2006,14(5) :449-452.
  • 7Tsutsui T, Takada N, Saito S, et al. Sharply directed emission in organic electroluminescent diodes with an optical-microcavi- ty structure[J]. Appl. Phys. Lett., 1994 ,65(15) : 1868-1870.
  • 8Holmes R J,Forrest S R,Tung Y J,et al. Sharply directed e- mission in organic electroluminescent diodes with an optical- microcavity structure [J].Appl. Phys. Lett., 2003, 82 (15) : 2422-2424.
  • 9Jiang L, Li S S, Tidrow M Z, et al. Three-stack,three-color/ quantum-well infrared photodetector for mid-, long-, and ver long-wavelength infrared detection[J].Applied Physics Let1 ters,2001,79(18) :2982-2984.
  • 10Han S,Huang O J,Lu Z H,at al. Organic light-emitting devices with silicon anodes[J].J. Appl. Phys., 2009,97 ( 9), 08610?- 086110.

共引文献28

同被引文献43

  • 1段炼,邱勇.有机发光材料与器件研究进展[J].材料研究学报,2015,29(5):321-336. 被引量:13
  • 2ZHOU Liang ZHANG Hong-jie YU Jiang-bo MENG Qing-guo PENG Chun-yun LIU Feng-yi DENG Rui-ping PENG Ze-ping LI Zhe-feng.Dependence of Performance of Organic Light-emitting Devices on Sheet Resistance of Indium-tin-oxide Anodes[J].Chemical Research in Chinese Universities,2006,22(4):427-431. 被引量:2
  • 3Park J S,Ohae H,Ohung H K,et al. Thin film encapsula- tion for flexible AM-OLED: a review [J]. Semiconductor Science and Technology, 201 ], 26( 3 ) ; 03,1001 -03400,0.
  • 4Li Y X,Hu X J,Zhou SY,et al. A facile process to produce highly conductive poly( 3,4-ethylenedioxythiophene films for ITO-free flexible OLED devices[J]. Journal of Materi- als Chemistry C. 2014,2(5) :916-924.
  • 57ambov L, Weidner K, Shamamian V, et al. Advanced chemical vapor deposition silicon carbide barrier technol- ogy for ultralow permeability applications[J]. Journal of Vacuum Science&Technology A, 2006, 24 ( 5 ) : 1706- 1713.
  • 6Hamada Y,Adachi C, Tsutsui T,et al. Blue-light-emitting organic electroluminescent devices with oxadiazole dimer dyes as an emitter [J]. Japanese Journal of Applied Physics, 1992,31 (6A) : 1812-1816,.
  • 7Lewis J. Material challenge for flexible organic devices [J]. Materials Today, 2006,9(4), 38-45.
  • 8Elliott S D, Scarel G, Wiemer C, et al. Ozone-based a- tomic layer deposition of alumina from TMA: Growth,mor- phology,and reaction mechanism[J]. Chemistry of Mate- rials, 2006,18(16) :3764-3773.
  • 9Meyer J, Schneidenbach D,Winkler T, et al. Reliable thin film encapsulation for organic light emitting diodes grown by low-temperature atomic layer deposition[J]. Applied Physics Letters, 2009,94(23) : 233305-233307.
  • 10Carcia P F, McLean R S, Reilly M H, et al. Ca test of AI203 gas diffusion barriers grown by atomic layer depo- sition on polymers[J]. Applied Physics Letters, 2006,89 (3) :031915-031917.

引证文献5

二级引证文献21

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部