摘要
本研究完成了在具有立方织构的Ni基带上用外延生长法制备NiO缓冲层的工作。用此方法制成的NiO膜具有很强的立方织构 ,其 ( 111)的Φ扫描峰的最大半高宽 (FWHM )值达到 11°。这种NiO膜的形成为进一步溅射沉积具有双轴取向的YBa2
NiO epitaxial buffer film was prepared on Ni substrate with sharp cubic texture by the method of epitaxial growth. The full width at half maximum(FWHM) of Ni(111) pole was 11°. This kind of material supplies a good matrix for the depositing of biaxially aligned YBa 2Cu 3O 7 film.
出处
《金属功能材料》
2000年第3期19-21,共3页
Metallic Functional Materials
