摘要
采用磁控溅射的方法在Si衬底上生长Fe/Si多层膜,退火后形成了硅化物薄膜。利用X射线衍射(XRD)、Raman光谱、原子力显微镜(AFM)研究了Fe/Si膜厚比和退火温度对薄膜结构特性的影响。研究表明,当Fe/Si膜厚比为1/2,预先在衬底上沉积Fe缓冲层,退火温度为750℃,形成的硅化物为β-FeSi2,晶粒的平均尺寸大约为50nm,且分布得比较均匀。如果Fe/Si厚度比为1/1或3/10时,形成的硅化物为ε-FeSi。随着退火温度的升高,Fe/Si之间的相互扩散逐渐增强,当退火温度为1 000℃时,形成了富硅的二硅化物的高温相α-FeSi2。
β-FeSi2 films were formed on Si substrate from Fe/Si nano-multilayers by magnetron sputtering.The samples were characterized by X-ray diffraction,Raman scattering,and Atom Force Microscopy（AFM）.Research results indicate that β-FeSi2 films were formed with the Fe/Si ratio of 1/2 under the annealing temperature of 750 ℃,the average size of the grains is about 50 nm,and the grains present a uniform distribution.It is also revealed that if the thickness ratio of Fe/Si is 1/1 or 3/10,ε-FeSi films are formed.When the annealing temperature is increased to be 1 000 ℃,high temperature phase α-FeSi2 is formed.
出处
《半导体光电》
CAS
CSCD
北大核心
2012年第6期846-849,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(61076055)
金华科技计划项目(2009-1-141)
复旦大学应用表面物理国家重点实验室开放课题(KL2011_04)
关键词
磁控溅射
Β-FESI2
膜厚比
magnetron sputtering
β-FeSi2
film thickness ratio
