摘要
磁控溅射法沉积的Fe／Si多层膜和Fe单层膜经真空热处理后制备了β-FeSi2薄膜。[Fe1nm／Si3.2nm]60多层膜在〈880℃温度下真空热处理2h后，样品均呈现β（220）／（202）择优取向，而Fe单层膜制备的样品则易形成β-FeSi2与ε-FeSi相的混合物，且取向杂乱。在920℃真空热处理后，两种样品都形成了α-FeSi2薄膜。原子力显微镜分析表明，样品表面粗糙度随热处理温度升高而变大，最大表面均方根粗糙度约为16nm。卢瑟福背散射分析发现，Fe／Si多层膜样品热处理过程中元素再分布很小。根据光吸收谱测量，Fe／Si多层膜制备的β-Fesi2薄膜的禁带宽度为0．88eV。
β-FeSi2 were prepared from Fe/Si multilayer and Fe single layer by magnetron sputtering and vacuum thermal annealing. （202）/（220） oriented β-FeSi2 films were fabricated from the [Fe lnnd Si 3.2nm]60 multilayer after vacuum annealing at temperatures lower than 880℃ for 2h, while mixture of β-FeSi2 and ε-FeSi phases with random orientation was found in samples from Fe single layer according to XRD patterns. After annealing at 920℃ in vacuum, only α-FeSi2 phase was formed in both kinds of samples. Atomic force microscope observation revealed that samples＇ surface roughness increases with increasing annealing temperature with a maximum RMS of 16nm. A very small redistribution of Fe and Si components in the films during the thermal annealing could be obtained by multilayer method according to Rutherford Backscattering Spectroscopy. Optical absorption spectra demonstrated that the β-FeSi2 films have a direct band gap about 0.88eV at room temperature.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第A01期370-372,共3页
Journal of Functional Materials
基金
基金项目
国家高技术研究发展计划（863计划）资助项目（2006AA032219）
关键词
光电薄膜
Β-FESI2
真空热处理
磁控溅射
optoelectronic films
β-FeSi2
vacuum thermal annealing
magnetron sputtering
