摘要
采用射频反应磁控溅射沉积了ZnO薄膜,然后在硫蒸气中于500℃硫化得到ZnS薄膜。用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外-可见透射光谱、俄歇电子能谱(AES)和多普勒展宽谱对薄膜进行了表征。ZnO硫化转变依赖于硫化时间。当硫化时间小于18 h时,ZnO只能部分转变为ZnS。只有当硫化时间等于或大于18h时,才能完全生成六方相ZnS薄膜,沿(0 0 10)晶面择优生长,硫化前后薄膜晶粒尺寸有显著变化。所得ZnS薄膜光吸收边宽化、光透过率低,ZnS薄膜带隙为3.54～3.66 eV。
ZnS thin films were produced by sulfidation of the RF reactive magnetron sputtered ZnO thin films in sulfur vapor at 500 ℃.The properties of the films were characterized by using the XRD,SEM,UV-VIS transmission spectra,AES and doppler broadening spectroscopy.After 18 h sulfidation,the partial ZnO was converted to ZnS.After ≥18 h sulfidation,ZnO was completely converted to the hexagonol ZnS,with a（0 0 10）-plane preferred orientation.Compared to the as-deposited ZnO,the grain size for the sulfurized films markedly enhanced.The resultant ZnS thin films had low transparency with the broadening of absorption edge in the optical transmittance.The bandgap energies of 3.54-3.66 eV were obtained for these ZnS films.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2012年第6期1700-1704,共5页
Journal of Synthetic Crystals
基金
湖北省教育厅科研计划重点项目(D20121109)
武汉科技大学大学生科技创新基金研究项目(11ZRA119)
冶金工业过程系统科学湖北省重点实验室开放基金项目(C201022)
关键词
ZNS薄膜
溅射
硫化
ZnS films
sputtering
sulfidation
