摘要
以反应磁控溅射方法沉积ZnO薄膜,然后在空气和H2S气氛中退火制备了六方相ZnS薄膜。用X射线衍射仪(XRD)、紫外-可见透射光谱和扫描电子显微镜(SEM)对薄膜进行表征。提高空气退火温度能够改善ZnS薄膜结晶性,而空气退火温度超过500℃则会降低ZnS薄膜结晶性。另外,当硫化退火温度低于400℃时,ZnO只能部分转变为ZnS,只有硫化温度等于或大于400℃时,ZnO才能全部转变为ZnS。硫化前后薄膜晶粒尺寸有显著变化。所得ZnS薄膜在可见光范围的透过率约为80%,带隙为3.61～3.70 eV。
Hexagonal ZnS thin films were produced by annealing of ZnO thin films in H2S,where ZnO was deposited by reactive magnetron sputtering and then annealed in air.The properties of the films were characterized by using the XRD,UV-Vis transmission spectra and SEM.Enhancing in-air-annealing temperature resulted in the improved crystallinity of ZnS thin films.With in-air-annealing temperature > 500 ℃,the crystallinity for the ZnS thin films deteriorated.Besides,at sulfidation temperature < 400 ℃,ZnO was converted partly to ZnS while sulfidation temperature ≥ 400 ℃,ZnO was completely converted to ZnS.ZnS thin films obviously had the greater grain size than ZnO thin films.These ZnS thin films exhibited the optical transparency as high as ～ 80% in the visible region with band-gap energies of 3.61-3.70 eV.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第6期1154-1158,共5页
Journal of Synthetic Crystals
基金
湖北省教育厅科研计划重点项目(D20121109)
武汉科技大学绿色制造与节能减排科技研究中心开放基金(B1220)
关键词
ZNS薄膜
溅射
空气退火
硫化
ZnS thin film
sputtering
in-air annealing
sulfidation
