摘要
针对传统一阶温度补偿的CMOS带隙基准电压源的温度特性较差的问题,在此基础上采用高阶温度补偿以改善温度特性,并且在电路中增加了带有负反馈的前调整器,提高了基准电压的电源抑制比。对电路采用SMIC0.18CMOS工艺进行仿真,输出电压在温度为-20℃～+58℃范围内有负的温度系数2.34×10-6/℃,在温度为58℃～120℃范围内有正的温度系数为2.21×10-6/℃,在低频时电源抑制比可达116 dB,在10 kHz时也可达到73 dB。
In view of the low temperature characteristics of CMOS bandgap voltage reference of traditional first order temperature compensation. In this paper, based on the traditional circuits, high order temperature compensation is used to improve temperature characteristics, and add former regulator with negative feedback into the circuit is added to improve the power supply rejection of reference voltage. Through simulation, by using SMIC0.18 technology, the temperature coefficient of the reference voltage is 2.34 × 10^ -6/℃ in the temperature range of -20℃ - ＋58 ℃ ,the temperature coefficient of the reference voltage is 2.21 × 10 -6/℃ in the temperature range of 58℃- 120 ℃. The low frequency power supply rejection ratio of the output voltage is 116 dB, and being 73 dB at 10 kHz.
出处
《电视技术》
北大核心
2013年第1期61-63,83,共4页
Video Engineering
关键词
带隙基准电压源
温度系数
电源抑制比
bandgap voltage reference
temperature coefficient
power supply rejection ratio
