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一种1.8V24×10^(-6)/℃宽温度范围CMOS带隙基准电压源(英文) 被引量：1

A 1.8 V 24×10^-6/℃CMOS Bandgap Voltage Reference with Wide Operation Temperature Range
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摘要 阐述了一种输出电压为853 mV的带隙基准电压源电路,该电路采用0.18μm标准CMOS工艺实现,可在1.8 V的电源电压下工作,在-20℃到120℃温度范围内其温度系数为24×10-6/℃。在频率低于10kHz时,电源抑制比保持在-66dB。电路版图的有效面积为0.022 mm2。该电路已成功应用于低功耗CMOS图象传感器芯片当中。 A bandgap circuit capable of generating a reference voltage of about 853 mV is presented.The proposed circuit,implemented in a 0.18μm standard CMOS technology,can operate with a supply voltage of 1.8 V and achieves 24×10^-6/℃temperature coefficient in the range from-20℃to 120℃.The power supply rejection is 66 dB until 10 kHz and the active area of this circuit is about 0.022 mm^2.Our circuit has been used in low power CMOS image sensor successfully.
作者 马建斌 金湘亮 计峰 陈杰 MA Jian-bin;JIN Xiang-liang;JI Feng;CHEN Jie(School of Physics and Microelectronics,Shandong University,Jinan,250100 China;Institute of Microelectronics of The Chinese Academy of Science,Beijing,100029 China)
机构地区 山东大学物理与微电子学院 中国科学院微电子研究所
出处 《电子器件》 CAS 2006年第3期697-700,共4页 Chinese Journal of Electron Devices
基金 国家自然科学基金(90307012)
关键词 带隙基准电压源 CMOS工艺 宽温度范围 电源抑制比 电路版图 传感器芯片 输出电压 温度系数
分类号 TN431.1 [电子电信—微电子学与固体电子学]
  • 相关文献

参考文献8

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同被引文献7

  • 1Michejda John,Kim Suk K.A Precision CMOS Bandgap Reference[J].IEEE J.Solid-State Circuits,Dec.1994,sc-19(6):1014-1021.
  • 2Xue Liang.Study on 10 bit High-Speed Pipelined Analog-Dig-ital Converter[D].Master Thesis,Tsinghua University,Beijing,2004.
  • 3Tham Khong-Meng,Nagaraj Krishnaswamy.A Low Supply Voltage,High PSRR Voltage Reference in CMOS Process[J].IEEE J.Solid-State Circuits,Dec_ 1995,30,(5):586-590.
  • 4Dai Yihong.Precision References for Mixed-Signal Integrated Circuits[D'].PhD.Thesis,Brigham Young University,2003.
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  • 6Razavi K Design of Analog CMOS Integrated Circuits[M],McGraw-Hill,2001.
  • 7Allen P E,Holberg D R.CMOS Analog Circuits Design,Second Edition[M].Oxford University Press,New York,2002.

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电子器件
2006年 第3期

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