摘要
固态功率控制器或固体继电器逐步向大功率方向发展,其结温测量与监控成为工程应用中的难题,针对这类具有输入输出隔离功能的器件,采用等功率结温测试法研究了基于MOSFET的功率控制器结温无损伤测量技术。利用MOSFET自身结构,通过研究寄生pn结电压随温度变化规律、器件正向功率和反向功率关系、等功率结温测试与实际结温测试结果对比,提出了适用于工程应用的结温无损伤测量方法。结果表明,采用本方法测试结温准确度在1%以内,并可有效避免器件时间差、测试时间差等问题,可实现多层结构、非气密结构等传统方法难以实现的结温测量,具有良好的工程应用价值。
Solid state power controllers or solid state relays are developing towards high power control, and the measurement and monitoring of the junction temperature become very difficult in the engineering application. In view of the devices with input/output isolation function, by using the equal power consumption test method the non-destructive measurement technique of the MOSFET junction temperature was studied based on MOSFET power controller. By examining the voltage variation of the parasite pn junction of the MOSFET with temperature and relations of the power consumption between forward and reverse, comparing the test results of the equal power consumption and experimental, the non-destructive method suitable for engineering application was presented. The results indicate that using this method, the test accuracy is within 1% and the influence of the device turn on/off time and the time difference between operating and test is eliminated. It is a good method in engineering and applies easily for the multilayer structure, non hermetical sealed devices＇ junction temperature test,which is difficult to realize before.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第1期74-78,共5页
Semiconductor Technology
关键词
金属氧化物半导体场效应晶体管
结温
无损伤
测量
等功率
metal-oxide-semiconductor field effect transistor （MOSFET）
junction temperature
non-destructive
measurement
equal power consumption
