期刊文献+

绝缘栅双极型晶体管传热模型建模分析 被引量:51

Modeling Analysis of IGBT Thermal Model
原文传递
导出
摘要 绝缘栅双极型晶体管(简称IGBT)等全控型电力电子器件是电能变换装置的核心部件,由于电力电子器件的工作性能与可靠性等都与其工作结温直接相关,而电力电子器件的热阻抗直接影响器件的结温,开展以IGBT热阻网络为对象的传热特性研究对于延长IGBT的使用寿命和提高其应用可靠性具有很重要的现实意义。为此,概述了IGBT物理结构、热阻网络及提取动态热阻抗曲线测试原理、传热模型3种建模方法及各方法的优劣。以某型IGBT模块为研究对象,通过理论计算得到其各分层及模块结壳稳态热阻值,建立了Cauer热网络模型,并在数值仿真软件ANSYS热仿真分析环境下利用有限元法(FEM)建立了数值仿真模型,利用搭建的试验平台开展了提取动态热阻抗实验,建立了7阶Foster实验测定模型。数值仿真和实验测定所得到的稳态结壳热阻值与理论计算模型接近,并对偏差进行了分析。建模研究IGBT传热模型对该类电力电子器件热传递模型建模研究及散热设计具有一定的指导意义。 The full-controlled power electronic devices,such as IGBT,are essential components of electrical energy transform equipment.Consequently,the physical structure and the conception,RC component network of thermal resistance,test principle and extraction platform for the transient thermal impedance of IGBT module,and three modeling methods are briefly introduced.The advantages and disadvantages of three modeling methods are also discussed.Moreover,the Cauer RC compact thermal component network model of a certain type IGBT is deduced from theoretical calculation.The junction-case thermal resistance can be derived by the finite element method in the numerical simulator ANSYS and the extraction of the transient thermal impedance curve.Thermal compact component network model can be derived from the numerical simulation and experimental results.The calculation,numerical simulation and experimental results are similar to each other.The thermal compact model and experimental results could be helpful for the modeling of thermal model and heat sink design for such electronic devices.
出处 《高电压技术》 EI CAS CSCD 北大核心 2011年第2期453-459,共7页 High Voltage Engineering
基金 国家自然科学基金(50737004) 国家自然科学基金委员会创新研究群体科学基金(50721063)~~
关键词 绝缘栅双极型晶体管 热模型 热阻 动态热阻抗 结温 RC热网络 壳温 数值仿真 有限元法 insulated gate bipolar translator(IGBT) thermal model thermal resistance transient thermal impedance junction temperature RC thermal network model case temperature numerical simulation finite element method
  • 相关文献

参考文献22

  • 1Luo Z H. A thermal model for IGBT modules and its implementation in a real time simulator[D]. Pittsburgh, USA: University of Pittsburgh, 2002.
  • 2Bryant A T, Parker-Allotey N A, Palmer P R. The use of condition maps in the design and testing of power electronic circuits and devices[J]. IEEE Transactions on Industry Applications, 2007, 43(4): 902-910.
  • 3唐勇,胡安,陈明.IGBT栅极特性与参数提取[J].电工技术学报,2009,24(7):76-80. 被引量:32
  • 4Fabis P M, Shun D, Windisehmann H. Thermal modeling of diamond-based power electronics package [C] // Fifteenth IEEE Semi-thermal Symposium. Northboro, USA: IEEE, 1999: 98- 104.
  • 5Masana F N. A new approach to dynamic thermal modelling of semiconductor packages [ J ]. Micro-electronics Reliability, 2001, 41(3): 901-912.
  • 6Drofenik U, Kolar J W. Teaching thermal design of power electronic systems with web-based interactive educational software [C]//IEEE Applied Power Electronics Conference and Exposition 2003. Miami, Florida, USA: IEEE, 2003: 1029-1036.
  • 7保爱林,邓爱民,傅剑锋,管国栋.小封装二极管的热阻测试[J].半导体技术,2008,33(11):1032-1035. 被引量:2
  • 8李庆民,徐国政,钱家骊,张节容.大功率GTO等效传热模型的研究[J].中国电机工程学报,2000,20(1):19-22. 被引量:19
  • 9蓝元良,汤广福,印永华,周孝信,辛玉梅.大功率晶闸管热阻抗分析方法的研究[J].中国电机工程学报,2007,27(19):1-6. 被引量:43
  • 10Shammas N Y A, Rodriguez M P, Plumpton A T, et al. Finite element modelling of thermal fatigue effects in IGBT modules [J]. IEE Proceedings--Circuits and Devices System, 2001, 148(2) : 95-100.

二级参考文献32

  • 1蓝元良,汤广福,武守远,荆平,印永华.220kV成碧线可控串补晶闸管阀电气设计及仿真[J].电网技术,2006,30(4):11-15. 被引量:11
  • 2郑君里 杨行峻.人工神经网络[M].北京:高等教育出版社,1992..
  • 3EIA/JESD51-1, Integrated circuits thermal measurement methodlectrical test method (single semiconductor device) [ S]. 16.
  • 4JEP84A, Recommend practice for measurement of transistor lead temperature [ S]. 1-10.
  • 5IPC-SM-782, Surface mount design and land pattern standard [S]. 100-102.
  • 6IPC-2221 ,Generic standard on printed board design [S] .50.
  • 7E/A/JESD51-1, Integrated circuits thermal measurement methodelectrical test method ( single semiconductor device ) [ S ]. 11 - 12.
  • 8Ruthing H, Umbach F, Hellmund O, et al. 600V- IGBT3: trench field stop technology in 70pm ultra thin wafer technology[C]. ISPSD, Cambridge, UK, 2003: 63-66.
  • 9Sheng Kuang, Williams B W, Finney S J. A review of IGBT models[J]. IEEE Transactions on Power Electronics, 2000, 15(6): 1250-1266.
  • 10Hefner A R, Bouche S. Automated parameter extraction software for advanced IGBT modeling[C]. Proc. of IEEE Workshop on Computers, Blacksburg, July, 2000: 10-18.

共引文献95

同被引文献369

引证文献51

二级引证文献383

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部