摘要
建立了电热耦合和损耗热场耦合计算模型,采用该模型,获得了相同外部条件下的绝缘栅双极型晶体管(IGBT)芯片结温波动特性及温度分布特征,完成了使用红外热成像实时探测短时脉冲工作方式下IGBT芯片表面温度波动及分布特性的预测.探测结果表明,在一定散热条件和占空比不大的情况时,短时脉冲间歇等非周期瞬态工作方式下芯片表面温度快速上升之后,进入一个缓慢的上升周期,实验也表明,在特殊工作场合时可突破器件手册推荐使用的最大电流值.利用建立的热分析模型,还可以实现对不同工作方式下器件结壳温差和结温波动幅度的预测.
The junction temperature characteristic fluctuation and temperature distribution profiles of the IGBT power module under transient impulse intermittent operation with the same external operation condition is analyzed for different simulation models,which is implemented by the power loss and temperature field coupling relation.The distribution of temperature profiles on the chip surface is detected by a high-speed mid-wave infrared imaging camera.The real time detection shows that under transient pulse intermittent operation the temperature of the chip surface rises quickly and then slowly for a certain heat sink situation and little duty ratio,while the junction temperature drops quickly in the intermittent time,and it is possible to breaking the restriction of the peak operational current.The simulation models are applied to predicting junction-case temperature drop and fluctuation characteristic of junction under temperature different working conditions.
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
2012年第4期70-76,共7页
Journal of Xi'an Jiaotong University
基金
国家自然科学基金重点资助项目(50737004)
关键词
绝缘栅双极型晶体管
短时脉冲
结温特性
温度分布
电热耦合
insulated gate bipolar transistor
transient pulse
junction temperature characteristic
temperature distribution
electro-thermal coupling
