摘要
采用PECVD法在多晶硅基底上沉积双层SiNx薄膜,研究了工艺参数对其膜厚、折射率、沉积速率、HF腐蚀速率及光电性能等的影响,并提出了优化的SiNx减反膜PECVD制备工艺。研究发现:衬底温度、射频频率、射频功率、腔室压力对SiNx薄膜性能均有重要影响,且优化工艺后的双层SiNx薄膜能有效提高多晶硅太阳电池光电性能。
Double-layer SiNx film was deposited on polycrystalline silicon substrate by PECVD under various conditions. Investigations were carried out on how the thickness, the refractive index, the deposition rate and HF etching rate as well as the electrical properties of the double-layer SiNx films were influenced by the technological parameters. The results demonstrated that the double-layer SiNx film property is strongly related to temperature, RF frequency, RF power and pressure, based on which the deposited parameter was optimized. It has been proved that the double-layer SiNx film deposited under the optimized condition can effectively improve the photoelectric properties of polycrystalline silicon solar cells.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2012年第6期827-830,共4页
Journal of Materials Science and Engineering
基金
国家自然科学基金资助项目(20976016)
长沙市科技局重点攻关资助项目(K1001020-11)
关键词
双层SiNx
减反膜
工艺参数
薄膜性能
double-layer SiNx film
technological parameter
properties of the film
