摘要
在玻璃衬底上采用常规的PECVD法在低温(≤400℃)条件下制得大颗粒(直径>100nm)、择优取向(220)明显的多晶硅薄膜。选用的反应气体为SiF4和H2混合气体。加入少量的SiH4后,沉积速率提高了近10倍。分析认为,在低温时促使多晶硅结构形成的反应基元应是SiFmHn(m+n≤3),而不可能是SiHn(n≤3)基团。
PolySi films with large grains (>100nm in diameter) were fabricated at relatively high deposition rate(～0.92nm/s) and low temperatures(≤400℃ ) by conventional PECVD system.In addition, it was found the grains' preferential orientation (220) is obvious. The films is obtained using SiF4 and H2 mixture as reaction gas source.When a little amount of SiH4 was added, the deposition rate was increased to almost 10 times. On the experiments we confirm that not the SiHn(n ≤3)but the SiFm Hn(m+n≤3) has contribution to polySi films growing at low temperatures.
出处
《液晶与显示》
CAS
CSCD
2003年第3期201-204,共4页
Chinese Journal of Liquid Crystals and Displays
基金
广东省科委资助项目(130 122084)
