摘要
本文论述在纯氮气氛中生长硅单晶技术,根据器件工艺要求,与器件厂相互配合,取得了功率晶体管成品率的大幅度提高,肯定了氮保护气氛下生长的硅单晶的优越质量。
The technique for growing CZ silicon crystals in pure nitrogen atmosphere is described. By cooperation with device manufacture according to the demands of, device process, the yield of power transistor has largely increased. The high quality of the CZ silicon crystals grown in nitrogen atmosphere was proved.
基金
国家自然科学基金
关键词
功率晶体管
氮
硅单晶
生长
Nitrogen, Transistor, Silicon crystal
