摘要
本文报道了GaAs常γ电调变容管材料的研究.文中分析了GaAs单晶衬底的质量对外延层表面形貌和外延层-衬底间界面状态的影响;研究了外延工艺条件与外延层浓度分布的关系;讨论了外延层载流子浓度分布对器件C-V特性的影响.文中还给出了材料的制管结果.
This paper describes recent progress of GaAs epitaxial material for an electrically tunned diode with constant γ. The influence of GaAs substrate quality on both the surface morphology of epilayers and the interfaces between epilayers and sub-states is analyzed. The dependence of doping profile of epilayers on the epitaxial growing process is studied. Then the influence of the epilayer carrier concentration profile on the C-V properties of the electrically tunned diodes with constant γ is discussed. Finally, the results of diodes made by the materials are also given.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第4期379-385,共7页
Research & Progress of SSE
