摘要
报导了宽带常γ线性电调管材料的研制技术及研究结果,给出了材料的多层浓度分布曲线。介绍了用该材料研制的WB70型宽带常γ线性电调管和WB010型砷化镓电调管管芯等器件结果。文中对宽带常γ线性电调管材料的质量进行了讨论。结果表明,适当控制生长速率才能得到较满意的浓度分布曲线;采用[100]向最近的[110]偏一定角度的单晶作衬底进行生长可获得表面形貌光亮的多层外延材料。
This article reports the technique of GaAs epitaxial material used for broadband linearly electrically tuning diode with constant 7 and the related results. The profile of the multilayer-epitaxial concentrations is also given. Some performance results of WB70 diode and WB010 diode chip made by these materials are in-troduced. The quality of these materials is discussed. The experimental results show that the satisfactory profiles and better mirror surface can be obtained by control-ling the growth rate and by employing [l00] substrate off certain degree towords [110].
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1993年第1期60-63,共4页
Research & Progress of SSE
关键词
砷化镓
汽相外延
生长速率
电调管
GaAs VPE, Profile of Concentration, Controlling Growth Rate,Orientation of Substrate, Surface Morphology
