摘要
本文使用单带双谷模型计算了通过AlGaAs势垒的隧道电流的压力系数.计算中考虑了能谷的非抛物线性,Г,X两个能谷的贡献以及电场的作用,说明了电流压力系数随电场增强而下降以及大压强下隧道电流对数偏离线性的实验现象.在此基础上进一步研究了加压GaAs/AlAs量子阱隧道电流中的Г-X混和效应.
The pressure coefficient of the tunnelling current through an AlxGa1-xAs barrier is calculated in this paper using the one-band two-valley model. The non-parabolicity effect of the energy band, the F and X two energy valleys and the contribution from the electric field are considered in this calculation. The results can explain such an experimental phenomenon that the pressure coefficient of the tunnelling current decreases with the increasing of electric field and the logarithm of tunnelling current deviates from linearity under a larger pressure. The F-X mixing in the tunnelling current through a GaAs/AlAs quantum well under pressure is further developed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第3期245-251,共7页
Research & Progress of SSE
