摘要
高温存储试验后某种ＧａＡｓ ＭＥＳＦＥＴ的栅－漏极正向和反向漏电流增大。为分析失效机理，测定了试验前后栅－漏极低压正向电流随温度的变化，定性估计了试验前后复合－产生中心浓度的变化，确定肖特基势垒接触有源层的复合－产生中心浓度增加是两种漏电流增大的原因，为高温下ＧａＡｓ ＭＥＳＦＥＴ的肖特基势垒接触存在栅金属下沉和扩散提供了证据。
Forward and Reverse Gate-Grain Leakage Current of GaAs MESFETs increase after High Temperature Storage Test (HTST) .In order to study the failure mechanisms an experiment to measure the low-biased forward current of Gate-Grain diode as a function of temperature has been carried out.The change of density of Combination-Generation Centers(C-G C)after HTST has been estimated qualitatively. The increase of the both leakage currents is due to the increase of C-G C in the active layer under the gate An evidence of gate metal sinking and metal-semiconducion after HTST has been obtained.
出处
《电子产品可靠性与环境试验》
2000年第4期8-11,共4页
Electronic Product Reliability and Environmental Testing
关键词
漏电流
砷化镓
MESFET
栅极
leakage current
schottky-barrier contact
combination-generation center
