摘要
应用双源法真空蒸发制备掺Gd的CdTe薄膜,并借助XPS对其进行组份分析。实验表明,Gd掺杂的CdTe薄膜的组分为Cd、Te、O、C、Gd等元素,其中C、O主要以物理吸附方式存在于薄膜表面;Cd、Te元素的存在方式为CdTe化合物及其氧化物形式;而Gd元素由于碳污染的原因在其表面未曾出现,只在刻蚀过程中出现;深度剥蚀分析表明在样品内部Cd元素的含量大于Te元素的含量,且接近于1∶0.8,趋于稳定。
CdTe thin film doped with Gd has been obtained by vacuum evaporation technique with two sources,and chemical state has been studied by X—ray photo—electron spectroscopy.XPS data show that Cd,Te,O,C and Gd elements exist on the surface of the film.C1s and O1s binding energy indicates that the two elements mainly exist in the form of physical adsorption.The experiment results show that Cd and Te atoms exist in oxidation state as in well as in CdTe.Due to carbon pollution,Gd element does not appear on the surface,only appears in the etching process.Erosion analysis shows the Cd element＇s content is greater than Te,and the ratio between them tends to 1 ： 0.8.
出处
《稀土》
EI
CAS
CSCD
北大核心
2012年第5期27-31,共5页
Chinese Rare Earths
基金
内蒙古教育厅项目(nj09006)
