期刊文献+

CdS及其稀土掺杂纳米带的制备与发光性质的研究 被引量:10

Photoluminescence properties of CdS and rare earth-doped CdS nanobelts
在线阅读 下载PDF
导出
摘要 采用热蒸发法制备CdS及其稀土掺杂的纳米带(CdS∶Ce3+、CdS∶Er3+)。利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和荧光光谱仪(PL)对纳米带的形貌、晶体结构和发光性质进行了表征和分析。结果表明,所制备的纳米带的外形规则,表面光滑、平整,纳米带的厚度大约在20~60nm范围内;纳米带具有六方结构,晶格常数a=0.414nm、c=0.671nm;CdS纳米带的光致发光谱的谱峰位于405nm左右;CdS∶Ce3+纳米带的光致发光谱的谱峰位于523和535nm处;CdS∶Er3+纳米带的光致发光谱中观察到3个强的发光峰,分别位于525、556和582nm处。 CdS and rare earth-doped CdS nanobelts were synthesized by thermal evaporation method.These synthesized nanobelts were characterized with scanning electron microscopy (SEM),X-ray diffraction (XRD) and photoluminescence spectroscopy (PL).SEM images show that each nanobelt has a uniform width along its entire length,flat and smooth surface.A typical thickness of these nanobelts is in the range of tens of nanometers.XRD pattern confirmed that nanobelts are hexagonal wurtzite structure with lattice constants a=0.414nm and c=0.671nm.Room-temperature photoluminescence spectra of the CdS nanobelt revealed that the emission band is centered at about 405nm.CdS∶Ce3+ nanobelts shows two emission bands centered at 523 and 535nm.CdS∶Er3+ nanobelts shows three emission bands centered at 525,556,and 582nm respectively.
出处 《功能材料》 EI CAS CSCD 北大核心 2010年第1期115-117,共3页 Journal of Functional Materials
基金 国家自然科学基金资助项目(10764005) 教育部新世纪优秀人才支持计划资助项目(NCET-08-0926) 云南省自然科学基金资助项目(06A0025Q 2007PY01-41) 云南省教育厅基金资助项目(06Y091)
关键词 CDS 稀土掺杂 纳米带 光致发光 CdS rare earth-doping nanobelt photoluminescence
  • 相关文献

参考文献13

  • 1Duan X, Lieber C M. [J]. Adv Mater(Weinherrn, Ger), 2000, 12:298-301.
  • 2Jun Y W, Lee S M, Kang N J, et al. [J]. J Am Chem Soc, 2001,123 : 5150-5153.
  • 3Xu D S, Xu Y J,Tang Y Q, et al. [J]. Adv Mater,2000,2: 520-523.
  • 4Cao H Q, Xu Y,Hong J M,et al. [J]. Adv Mater,2001,13: 1393-1394.
  • 5Liu Y K,Zhou X P, Hou D D, et al. [J]. J Mater Sci,2006, 41..6492-6496.
  • 6Sreejith K, Nuwad J,Thinaharan C, et al. [J]. Appl Surf Sci, 2007,253 : 7041-7045.
  • 7Ge J P, Wang J,Zhang H X, et al. [J]. Adv Funet Mater, 2005,15: 303-308.
  • 8Spanhel L, Haase M, Henglein A, et al. [J]. J Am Chem Soc, 1987,109 : 5649-5655.
  • 9Butty J, Peyghambarian N, Mackenzie J D, et al. [J]. Appl Phys Lett, 1996,69 : 3224.
  • 10Zhang J H, Yang X G, Qian Y T, et al.[J] Adv Mater, 2000,12 : 1348-1351.

同被引文献178

引证文献10

二级引证文献40

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部