摘要
利用氮气作保护气体，用元素合成法进行开管烧结，合成具有单一相黄铜矿结构的ＣｕＩｎＳｅ２ 多晶材料．用真空双源蒸发方法，通过精确控制ＣｕＩｎＳｅ２ 源和Ｃｕ 源或Ｓｅ 源的温度和蒸发速率以及衬底温度，制备ＣｕＩｎＳｅ２ 多晶薄膜，并对ＣｕＩｎＳｅ２ 多晶薄膜的组份、结构、工艺条件及电学性质进行了分析。
The CuInSe 2 polycrystalline materials of the single phase composition were synthesized by the direct elemental combination method sintering in an open quartz tube in N 2 ambient.The CuInSe 2 polycrystalline films are made by the double-source method in evaporating,procedure of CuInSe 2 source and Cu source or Se source,the evaporation rates and the substrate temperature were controlled accurately by the microcomputer system.The relations between composition,structure,technology condition and electrical properties of the CuInSe 2 polycrystalline film were analysed and studied.
出处
《内蒙古师范大学学报（自然科学汉文版）》
CAS
1999年第4期277-281,共5页
Journal of Inner Mongolia Normal University(Natural Science Edition)
基金
内蒙古自然科学基金
