摘要
采用Ti、Si、TiC、金刚石磨料为原料,通过放电等离子烧结(SPS),制备了Ti3SiC2陶瓷结合剂金刚石材料.研究结果表明,Ti-Si-2TiC试样经SPS加热的过程中位移、位移率和真空度在1200℃时发生明显变化,表明试样发生了物理化学变化.XRD分析结果表明1200℃时试样发生化学反应生成了Ti3SiC2.随着温度升高,试样中Ti3SiC2含量逐渐增加.当烧结温度为1200℃、1300℃、1400℃和1500℃时,产物中Ti3SiC2含量分别为65.9%、79.97%、87.5%和90.1%.在Ti/Si/2TiC粉料中添加适量的金刚石5%和10%进行烧结,并未抑制Ti3SiC2的反应合成.SEM观察表明,金刚石与基体结合紧密,同时其表面生长着发育良好的Ti3SiC2板条状晶粒.提出了一种金刚石表面形成Ti3SiC2的机制,即金刚石表面的碳原子首先与周围的Ti反应生成TiC,然后TiC再与Ti-Si相发生化学反应,生成Ti3SiC2.
Ti3SiC2 bonded diamond materials were fabricated by spark plasma sintering using Ti/Si/TiC/diamond abrasive as the raw materials.The result showed that displace,dispalce rate and vaccum degree of Ti-Si-2TiC sample sintered by SPS were obviously changed.The Ti/Si/TiC powders were obviously sintered and transformed to TiC and Ti3SiC2 at 1200℃ during the sintering process.With increasing sintering temperature,Ti3SiC2 content in the samples increased.Ti3SiC2 content in the samples were 65.9%,79.97%,87.5% and 90.1%,respectively.Addition of（5% and 10%） appropriate amounts of diamond did not inhibit the reaction synthesis of Ti3SiC2.SEM observation showed that diamond had one close combination with the matris,and Ti3SiC2 grains grew on the surface of diamond.One formation mechanism of Ti3SiC2 on the surface of diamond was proposed,C on the surface of diamond reacted with Ti and formed TiC firstly,then TiC reacted with Ti-Si phase and formed Ti3SiC2.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第10期1099-1104,共6页
Journal of Inorganic Materials
基金
河南省基础与前沿技术研究计划项目(102300410274)~~
