摘要
研究过渡层结构对有机薄膜电致发光器件性能的影响。分别以铟、锡的氧化物 ( indium- tin- oxide,ITO)为阳极 ,以镁银合金 ( Mg:Ag)为阴极 ,用真空热蒸发法制备了结构为 ITO/ Cu Pc/ TPD/ Alq3/ Mg:Ag和 ITO/ TPD/ Alq3/ Mg:Ag的两类器件 ,并测定了器件的衰减曲线、发光光谱以及亮度—电压特性曲线。结果显示 :铜酞菁过渡层的使用虽然改善了器件的稳定性 ,但是却增大了器件的启亮电压 ,而且器件最大发光强度和最大光视效能也降低了。结果表明 :在高稳定性和高亮度、高光视效能不可兼得的时候 ,需要通过选择过渡层材料 ,优化制备工艺 。
Organic electroluminescent devices have attracted much attention recently. The dependence of the characterization of devices on the introduction of the buffer layer was studied using two devices with ITO/CuPc/TPD/Alq 3/Mg∶Ag and ITO/TPD/Alq 3/Mg∶Ag structures fabricated by vacuum deposition. The test investigated effects of the buffer layer on the electroluminescent (EL) spectra, brightness voltage curve and luminous efficiency as well as the stability of the devices. The results confirmed that the inserted CuPc layer greatly improved device stability. But the results also showed that the introduction of the CuPc layer increased the device turn on voltage and reduced the maximum luminous brightness and the maximum luminous efficiency. Therefore the material choice and fabricating process must be optimized to balance the brightness and the luminous efficiency which can not be increased simultaneously.
出处
《清华大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2000年第6期1-3,共3页
Journal of Tsinghua University(Science and Technology)
基金
国家自然科学基金项目 !( 5 9790 0 5 0 -0 8)
