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空穴注入层对OLED性能的影响(英文)

INFLUENCE OF ANODE BUFFER LAYER MATERIALS ON PERFORMANCE OF OLEDS
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摘要 通过实验研究了不同种类的空穴注入层材料对有机电致发光器件(OLED)性能的影响,将酞菁铜(CuPc)、2T-NaTa和TcTa分别作为空穴注入层材料制备了3种器件,然后测试器件的电流-电压特性、高度-电压特性及发光效率-电压特性,并进行了对比.结果发现用CuPc、2T-NaTa和TcTa作为空穴传输层的3种器件的流明效率最大值分别为2.94cd/A,2.4cd/A和18cd/A;2T-NaTa作为空穴注入层的器件的启亮电压最低.由此得出结论:在实验研究的3种材料中,2T-NaTa最适合作为空穴传输层. In this paper, the influence of different anode buffer layer materials on the performance of OLEDs was studied. Three kinds devices were made with Cupc,2T-Nata and TcTa as buffer layer respectively,and then characteristics of devices were tested, including currentvoltage curve, brightness voltage curve and luminous efficiency-voltage curve. The results was compared,and find that for the device using CuPc, 2T-NaTa and TcTa as buffer layer, the maximum luminous efficiency is 2. 94cd/A, 2. 4cd/A and 18cd/A respectively. The threshold voltage using 2T-NaTa as buffer layer is the lowest among them. It can conlude that 2T-NaTa is most suitable for using as anode buffer layer among these three materials.
出处 《陕西科技大学学报(自然科学版)》 2007年第6期7-9,13,共4页 Journal of Shaanxi University of Science & Technology
基金 陕西省专利产业化项目(2005ZZ-04) 陕西省教育厅产业化项目(06JC23)
关键词 酞氰铜(CuPc) 流明效率 2T-NaTa 空穴注入层 CuPc luminescent efficiency 2T NaTa anode buffer layer
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参考文献6

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