期刊文献+

低压驱动薄膜电致发光特性及其机理的研究 被引量:2

Low-Voltage-Driven Thin Film Electroluminescent Devices and Mechanism
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摘要 采用低电阻率的Ta2O5/SiO2、Ta2O5/Al2O3复合层制备出低压驱动ZnS:Mn薄膜电致发光器件,它的阈值电压在40V以下。当驱动电压为60V、频率为50Hz时,发光亮度在200cd/m2以上。这种器件具有其独特的亮度-电压特性和电荷存储量-电压特性。利用空间电荷限制电流模型分析了发光层中空间电荷、电场强度在这种低压驱动电致发光器件发光层中的分布特性,并对低压驱动薄膜电致发光机理、亮度-电压特性、电荷存储量-电压特性进行了解释。分析表明复合层的电导性质是获得低压驱动电致发光器件的关键。 Low-voltage-driven thin film electroluminescent devices are developed by using lowxesistivity stacked film SiO2/Ta2O5 and Al2O3/Ta2O5. At 50 Hz sinusoidal wave voltage excitation, its threshold voltage is below 40 V, and brightness is above 200cd/ cm2 at 60 V. Its characteristics of brightness^voltage (B ~ V) curve and integrated charge^voltage (Q ~ V) figure are different from usual one. By using a model of space charge- limited- Cur rent, the distr ibution char acter istics of the space charge and electr ical field acrosss the phosphor in the device are analyzed, the mechanism of low-voltage driven thin film electroluminescence, and the charactCristics of B ~ V curve and Q ~ V , figure are well explained. It is considered that the electroconductibility of the stacked film is the key of low-voltuge-driven thin film electroluminescence.
出处 《光学学报》 EI CAS CSCD 北大核心 1996年第4期551-555,共5页 Acta Optica Sinica
关键词 电致发光 低压驱动 空间电荷限制 显示器 electroluminescence, low-voltage-driven,space-charge-limited-current
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参考文献4

  • 1Hsu C T,J Appl Phys,1992年,73卷,3期,1509页
  • 2王季陶,半导体材料,1990年
  • 3曲喜新,薄膜物理,1984年
  • 4叶良修,半导体物理学,1983年

同被引文献39

  • 1刘杰,赵永林,王旭光.一种光纤隔离型直流高压测量装置[J].仪器仪表学报,2004,25(z1):281-282. 被引量:4
  • 2宁叔帆,于昕哲,徐阳,陈维,刘斌,陈寿田.利用SiC电致发光特性在线测量防晕层表面电场分布[J].西安交通大学学报,2006,40(10):1120-1124. 被引量:14
  • 3周连祥.ACEL ZnS∶Cu发光体内的Cu^+迁移与发光的老化[J].发光学报,2007,28(1):49-52. 被引量:2
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