摘要
利用分子束外延技术和 S- K生长模式 ,系统研究了 In As/Ga As材料体系应变自组装量子点的形成和演化 .研制出激射波长λ≈ 960 nm,条宽 1 0 0μm,腔长 80 0μm的 In( Ga) As/Ga As量子点激光器 :室温连续输出功率大于 3.5W,室温阈值电流密度 2 1 8A/cm2 ,0 .61 W室温连续工作寿命超过
Systematic study of molecular beam epitaxy\|grown self\|assembled In(Ga)As/GaAs quantum dots (QDs) is demonstrated.Room\|temperature (RT) continuous\|wave(CW) lasing at the wavelength of 960nm with output power more than 3.5W is achieved from vertical coupled In(Ga)As/GaAs QDs ensemble.The RT threshold current density is 218A/cm\+2.A RT CW output power of 0 61W ensures at least 3760 hours lasing (only drops 1 02db).
基金
国家自然科学基金和国家高技术新材料领域资助项目
