1.55μm波长发光的自组织InAs量子点生长

Growth of Self-assembled InAs Quantum Dots Emitting at 1.55μm

下载PDF

导出

摘要通过引入较长停顿时间 ,采用分子束外延循环生长方法在 35 0℃低温获得了一种横向聚合的InAs自组织量子点 ,在荧光光谱中观察到 1.5 5 μm波长的发光峰 .通过AFM和PL谱的联合研究 ,表明此低温循环生长方法有利于在长波长发光的量子点的形成 . A new kind of lateral associated self-assembled InAs quantum dots(QDs) was grown by solid-source molecular beam epitaxy at low substrate temperature of 350℃ with long time interruption in cycling deposition. In photoluminescence(PL) spectra,1.55μm light emission is observed. Atomic force microscopy(AFM) and PL measurements reveal that this growth technique is benefit to forming QDs with long emission wavelength.

作者澜清周大勇孔云川边历峰苗振华江德生牛智川封松林

机构地区中国科学院半导体研究所

出处《人工晶体学报》 EI CAS CSCD 北大核心 2002年第5期464-467,共4页 Journal of Synthetic Crystals

基金国家自然科学基金 (No 6 0 176 0 0 6和 6 0 0 2 5 410 ) 中国科学院纳米科学与技术资助项目

关键词自组织InAs量子点循环生长分子束外延 1.55μm波长 InAs self-assembled quantum dots cycling deposition molecular beam epitaxy 1.55μm wavelength

分类号 TN304.2 [电子电信—物理电子学]

引文网络
相关文献

参考文献12

1[1]Roan E J,Cheng K Y.Long-wavelength (1.3 μm) Luminescence in InGaAs Strained Quantum-well Structures Grown on GaAs.Appl.Phys.Lett.,1991,59(21):2688
2[2]Ustinov V M,Malee N A,et al.InAs/InGaAs Quantum Dot Structures on GaAs Substrates Emitting at 1.3μm.Appl.Phys.Lett.,1999,74(19):2815
3[3]Bloch J,Shah J,et al.Optical Properties of Multiple Layers of Self-organized InAs Quantum Dots Emitting at 1.3μm.Appl.Phys.Lett.,2000,77(16):2545
4[4]Liu H Y,Wang X D,et al. Effects of In Mole Fraction in InGaAs Overgrowth Layer on Self-assembled InAs/GaAs Quantum Dots.J.Crystal Growth,2000,213(1):193
5[5]Wang X D,Niu Z C,Feng S L,Miao Z H.1.35μm Photoluminescence from In0.5Ga0.5As/GaAs Islands Grown by Molecular Beam Epitaxy Via Cycled (InAs)1/(GaAs)1 Monolayer Deposition.J.Crystal Growth,2000,220(1):16
6[6]Tatebayashi J,Nishioka M and Arakawa Y.Over 1.5μm Light Emission from InAs Quantum Dots Embedded in InGaAs Strain-reducing Layer Grown by Metalorganic Chemical Vapor Deposition.Appl.Phys.Lett.,2001,78(22):3469
7[7]Maximov M V,Tsatsul'nikov A F,et al.Optical and Structural Properties of InAs Quantum Dots in a GaAs Matrix for a Spectral Range up to 1.7μm.Appl.Phys.Lett.,1999,75(16):2347
8[8]Zhukov A E,Kovsh A R,et al.Lang-wavelength Lasing from Multiply Stacked InAs/InGaAs Quantum Dots on GaAs Substrates.Appl.Phys.Lett.,1999,75(13):1926
9[9]Park G,Shchekin O B,et al.Room-temperature Continuous-wave Operation of a Single-layered 1.3μm Quantum Dot Laser.Appl.Phys.Lett.,1999,75(21):3267
10[10]Mukai K,Nakata Y,et al.High Characteristic Temperature of Near 1.3 μm InGaAs/GaAs Quantum-dot Lasers at Room Temperature.Appl.Phys.Lett.,2000,76(23):3349

1王晓东,刘会赟,牛智川,封松林.不同组分In_xGa_(1-x)As(0≤x≤0.3)覆盖层对自组织InAs量子点的影响[J].物理学报,2000,49(11):2230-2234. 被引量：4
2郑玉宏,赵建华,毕京锋,王玮竹,邓加军,夏建白.Cr掺杂InAs自组织量子点的分子束外延生长及磁性质[J].Journal of Semiconductors,2007,28(z1):211-214.
3王海龙,朱海军,封松林,宁东,汪辉,王晓东,江德生.Be掺杂InAs自组织量子点的发光特性[J].发光学报,2000,21(1):20-23. 被引量：2
4赵东.中兴通讯信息[J].邮电设计技术,2015(8):10-10.
5李永俊.电话机的正确使用[J].新农村,2002(4):21-22.
6羽冬.冰冻芯片能提高Si芯片的速度[J].半导体信息,2006,0(4):33-33.
7David Haskin,贾树山.DragonDictate使语音识别迈上新台阶[J].个人电脑,1996,0(9):43-45.
8杨英惠（摘译）.锑化铟晶体管工作电压低、开关快[J].现代材料动态,2006(2):8-8.
9刘宁,金鹏,吴巨,王占国.利用多层堆垛InAs/GaAs量子点结构实现1.3μm光致发光[J].Journal of Semiconductors,2007,28(z1):215-217.
10周星飞,施斌,胡冬枝,樊永良,龚大卫,蒋最敏.量子点的形成对Si/Ge界面互扩散的影响[J].Journal of Semiconductors,2002,23(7):731-734.

人工晶体学报

2002年第5期

浏览历史

内容加载中请稍等...

1.55μm波长发光的自组织InAs量子点生长

参考文献12

相关作者

相关机构

相关主题

浏览历史