摘要
本文主要对基片内材料去除非均匀性的形成机理进行了深入的研究;首先分析了化学机械抛光(CMP)时抛光机运动参数对硅片表面上相对速度分布非均匀性、摩擦力分布非均匀性、接触压力分布非均匀性及磨粒运动轨迹密度分布非均匀性的影响规律,然后进行了基片内材料去除非均匀性实验,通过实验得出了抛光机运动参数对基片表面材料去除非均匀性的影响;通过比较理论分析与实验结果,基片表面上相对速度分布非均匀性、摩擦力分布非均匀性及接触压力分布非均匀性随转速的变化趋势与基片表面材料去除非均匀性的实验结果的曲线性质不匹配,而只有抛光液中的磨粒在基片表面的运动轨迹分布密度非均匀性与基片表面材料去除非均匀性的实验结果曲线趋势相同;研究结果表明,基片表面材料去除非均匀性是由磨粒在基片表面上的运动轨迹分布密度非均匀性造成的,充分说明了基片表面材料去除的机械作用主要是磨粒的机械作用。
In this paper, the formation mechanism of WIWNU （With-In-Wafer material removal has been researched in-depth in chemical mechanical polishing Non-Uniformity ） on （CMP） of hard and brittle crystalline substrate. Firstly, the influence of the motion parameters of CMP machine on the non- uniformity of the relative velocity distribution, the frietion force distribution, the contact pressure distribution and the motion trajectory distribution of the abrasive on the wafer surface has been analyzed. Next, the experiment of the WIWNU on material removal has been conducted and in wafer CMP. By the experiment, the influence of the motion parameters of CMP machine on WIWNU of material removal has been obtained. Lastly, by comparing the theoretical analysis and experimental results, only these trends of the motion trajectory distribution of the abrasive accord with the experimental results. So, it shows that, the WIWNU of material removal is caused by the density distribution of the abrasives motiontrajectory on the wafer surface. It is fully explained that the mechanical action of the material removal is mainly the mechanical action of abrasive.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2012年第4期1130-1137,共8页
Journal of Synthetic Crystals
基金
国家自然科学基金(51075125)
关键词
硬脆晶体基片
化学机械抛光
非均匀性
hard and brittle crystal substrate
chemical mechanical polishing
non-uniformity
