摘要
对ＡＩＢｒ３－ＮＨ３Ｎ２体系化学气相淀积法合成ＡＩＮ膜进行了热力学分析和工艺设计，研究了在不同淀积温度和体系总压时，体系中主要气态物种的平衡分压和ＡＩＮ膜的理论淀积速率与源温和载气流量的关系，并与微波等离子体化学气相淀积ＡＩＮ膜的实验结果进行了比较．
Thermodynamic analysis and a technical design and experimental results for the chemical vapor deposition(CVD) of AIN film from AIBr2-NH3-N2 system are presented.At various deposition temperatures,input gas flow rates and total pressure,the equilibrium partial pressures of the major gaseous species are calculated.The effects of precursor temperature and gas flow rate on the theoretical deposition rate of AIN film are estimated.And theoretical results are compared with those of the experiments by a microwave plasma CVD of AIN thin films.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第6期838-842,共5页
Chemical Journal of Chinese Universities
基金
国家自然科学基金
