摘要
掺砷碲镉汞是一种用于制作p-on-n器件和实现高性能碲镉汞探测器及多色红外焦平面阵列的关键材料。对掺砷碲镉汞的相关文献进行了归纳分析。砷激活效率与退火条件及砷的浓度直接相关。对于掺砷浓度在10^(16)～10^(18)cm^(-3)范围内的碲镉汞,通过300℃/16 h和240℃/48 h两步退火可将样品前表面激活为p型材料,但汞空位的浓度相对于背面较高。样品背面靠近衬底处可能存在As_(Te)和As_(Hg)缺陷。
Arsenic doped HgCdTe is the key material in the development of infrared devices including high performance infl-ared detectors, infrared focal plane arrays and p-on-n heterojunctions. In this work, references about arsenic doped HgCdTe are summarized. The activation of As is related to the annealing condition and dopant concentrations. For doping concentrations in the range of 10^16- 10^18 cm-a, although a two-step annealing process can activate the As on the frontside of HgCdTe, the VHg concentration is higher relative to the backside of HgCdTe. There might exist A8Te and AsHg in the space region close to the substrate.
出处
《红外》
CAS
2012年第4期1-6,共6页
Infrared
基金
国家自然科学基金项目(10927404
61176075)
国家重点基础研究发展规划项目(2007CB924902)
关键词
砷
碲镉汞
掺杂浓度
激活
缺陷
arsenic
mercury cadmium telluride
dopant concentration
activation
defect
