摘要
文章首先从原理上较为全面地阐述了欧姆接触形成的必要条件和广泛应用,其次主要针对工艺生产过程中产生的多种n+欧姆接触不良情况进行了汇总分析并提供了相应解决方案。提出了等离子损伤对欧姆接触电阻有较大影响并对此进行实验对比验证。伴随着现代工艺的不断发展进步,欧姆接触电阻将会在电路设计应用中越来越受到重视并发挥重大作用。
This paper introduces the necessary conditions of the ohmic contact formation.Secondly,a variety of bad n＋ ohmic contact is analyzed and provided appropriate solutions in process.At the same time plasma damage has a great influence in the ohmic contact that is proposed and verified.
出处
《电子与封装》
2012年第3期33-35,40,共4页
Electronics & Packaging
