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门极换向晶闸管(GCT)扩散阻挡层的研究

The Research on Diffusion Barrier of Gate Commutated Thyristor
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摘要 通过对多种阻挡层特性的分析,选定了熔点高、化学稳定性好、电阻率低的TiN薄膜作为门极换向晶闸管阳极的阻挡层.采用磁控溅射技术生长的TiN,经俄歇电子谱仪分析表明,TiN阻挡层系统能有效地阻挡硅和铝的相互扩散,可作为门极换向晶闸管阳极理想的阻挡层材料. Through the analysis of many diffusion barriers, TiN thin film was chosen as the diffusion barrier for the anode metallization of gate commutated thyristor for its high melting point and chemistry stability and low electrical resistivity. TiN thin film is deposited by magnetron sputtering technique. The TiN film barrier property against Cu diffusion was investigated through AES depth profiling, the obtained results show that TiN is a suitable diffusion barrier for anode metallizadon of gate commutated thyristor.
作者 吴春瑜 卢雪梅 白永生 刘一婷 张馨芳
机构地区 辽宁大学物理系 辽宁大学教务处
出处 《辽宁大学学报（自然科学版）》 CAS 2006年第4期289-291,共3页 Journal of Liaoning University：Natural Sciences Edition
基金 辽宁省科技厅自然科学基金(002021) 辽宁省教育厅自然科学基金(20021076)
关键词 扩散阻挡层 门极换向晶闸管 金属化. diffusion barrier gate commutated thyristo metallistion.
分类号 TN312 [电子电信—物理电子学]
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辽宁大学学报（自然科学版）
2006年 第4期

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