期刊文献+

铌酸锂干法刻蚀的研究进展 被引量:3

Research Development on LiNbO_3 Dry Etching
原文传递
导出
摘要 概述了近年来国内外对铌酸锂(LN)晶体干法刻蚀技术的研究进展。根据刻蚀原理和特点,现有的LN干法刻蚀技术可分为等离子体刻蚀、激光微加工技术和Ti扩散电化学刻蚀。对各刻蚀方法及其研究进展进行了总结,分析了不同干法刻蚀方法之间的区别和联系,并对各方法中存在的问题进行了探讨。其中等离子体刻蚀技术由于其良好的图形转移特性,得到了最广泛的应用;激光微加工技术在制备光子晶体结构和微光栅结构中具有独特的优势;Ti扩散电化学刻蚀LN为制备大尺寸的LN基结构指明了新的方向。 The dry etching technology for lithium niobate (LN) crystal is reviewed. According to the etching mechanism and characteristics, the existing LN dry etching methods can be classified as the plasma etching, laser micromachining technique and Ti diffusion electrochemical etching. The etching methods and research progress are summarized. The difference and relationship of the different etching methods are analyzed, and the problems of the etching methods are dis- cussed. The plasma etching technology is most widely used because of its excellent pattern trans- fer characteristics. The laser micromachining technique has the unique advantages in the preparation of the photonie crystal structure and micro-grating structure. The Ti diffusion electrochemi- cal etching indicates a new development direction for the fabrication of large scale pattern on LN.
出处 《微纳电子技术》 CAS 北大核心 2012年第3期197-207,共11页 Micronanoelectronic Technology
基金 国家自然科学基金资助项目(61078039) 中国科学院"百人计划"择优支持资助项目
关键词 集成光学 光学器件 铌酸锂 干法刻蚀 反应离子刻蚀 integrated optics optical devices lithium niobate (LN) dry etching reactive ionetching
  • 相关文献

参考文献61

  • 1NOGUCHI K,MITOMI O,MIYAZAWA H,et al.A broad-band Ti∶LiNbO3optical modulator with a ridge structure[J].Journal of Lightwave Technology,1995,13(6):1164-1168.
  • 2CHANG S J,TSAI C L,LIN Y B,et al.Improved elec-trooptic modulator with ridge structure in X-cut LiNbO3[J].Journal of Lightwave Technology,1999,17(5):843-847.
  • 3CHENG R S,WANG T J,WANG W S.Wet-etched ridgewaveguides in Y-cut lithium niobate[J].Journal of Light-wave Technology,1997,15(10):1880-1887.
  • 4HSU W H,LIN K C,LI J Y,et al.Polarization splitter withvariable TE-TM mode converter using Zn and Ni codiffusedLiNbO3waveguides[J].IEEE Journal of Selected Topics inQuantum Electronics,2005,11(1):271-277.
  • 5BUCHMANN P,KAUFMANN H.GaAs single-mode rib wavegui-des with reactive ion-etched totally reflecting corner mirrors[J].J Lightw Technol,1985,3(4):785-788.
  • 6MANOLATOU C,JOHNSON S G,FAN S,et al.High-density integrated optics[J].J Lightw Technol,1999,17(9):1682-1692.
  • 7MEKIS A,CHEN J C,KURLAND I,et al.High trans-mission through sharp bends in photonic crystal waveguides[J].Phys Rev Lett,1996,77(18):3787-3790.
  • 8FOGLIETTI V,CIANCI E,PEZZETTA D,et al.Fabrica-tion of band-gap structures in planar nonlinear waveguides forsecond harmonic generation[J].Microelectronic Enginee-ring,2003,67/68(1):742-748.
  • 9王一鸣,熊瑛,刘刚,田扬超.Ar/CHF_3反应离子束刻蚀SiO_2的研究[J].微细加工技术,2005(3):67-70. 被引量:3
  • 10OHMACHI Y,NODA J.Electro-optic light modulator withbranched ridge waveguide[J].Appl Phys Lett,1975,27(10):544-546.

二级参考文献20

  • 1曾祥林,宋柏泉,赵小林,蔡炳初.离子束刻蚀过程中光刻胶收缩行为研究[J].微细加工技术,1994(3):22-26. 被引量:6
  • 2赵光兴,杨国光,陈洪,侯西云.宽离子束刻蚀微透镜阵列研究[J].微细加工技术,1995(1):21-24. 被引量:10
  • 3徐平,张晓春,郭履容,郭永康,周祥,杜春雷,周明宝.二元光学元件制作误差分析与模拟[J].光学学报,1996,16(6):833-838. 被引量:20
  • 4谈苏庆,周进,高文琦.二元光学元件制作误差的振幅矢量分析法[J].激光技术,1996,20(5):308-312. 被引量:7
  • 5Lee Robert E. Microfabrieation by ion beam etching [J]. J Vac Sci Technol, 1979, 16(2): 164- 170.
  • 6Gokan H, Esho S. A gap reduction technique for obtaining submicron geometries utilizing reduction effect[J]. J Vac Sci Technol, 1981, 19(1): 32-35.
  • 7Tsuge H, Esho S, Gokan H. Simulation of ion beam etched pattern profiles [ J ] . J Vac Sci Technol, 1981, 19(2): 221 - 224.
  • 8CamphellStephenA.The Science and Engineering of Microelectronic Fabrication [ M ].北京:电子工业出版社,2003.267-283.
  • 9Harper J M E, Cuomo J J. Developments in broad beam ion source technology and applications[J]. J Vac Sci Technol A, 1983, 1(2):337 - 338.
  • 10Harper J M E, Cuomo J J. Technology and applications of broad beam ion sources used in sputtering(Part 2): Application[J]. J Vac Sci Technol, 1982, 21(3): 737-757.

共引文献4

同被引文献31

  • 1马向国,顾文琪.聚焦离子束加工技术及其应用[J].微纳电子技术,2005,42(12):575-577. 被引量:9
  • 2董淼 唐雄贵 努尔买买提等.大角度、低损耗渐变折射率型Y分支波导设计与分析.光学学报,2009,29(2):97-100.
  • 3H. Hu, R. Ricken, W. Sohler. Low-loss ridge waveguides on lithium niobate fabricated by local diffusion doping with titanium [J]. Appl. Phys. B- Lasers and Optics, 2010, 98(4)- 677-679.
  • 4RafaeI Salas-Montiel, Mehmet E. Solmaz, Ohannes Eknoyan et al: Er-doped optical waveguide amplifiers in X-cut lithium niobate by selective codiffusion [J]. IEEE Photon. Technol. Lett., 2010, 22(6): 362-364.
  • 5F. S. Chen, J. T. Lamacchia, D. B. Francer. Holographic storage in lithium niobate[J]. Appl. Phys., 1968, 13 (7): 223-224.
  • 6H. Hu, R. Ricken, W. Sohler et al: Lithium niobate ridge waveguides -abricated by wet etching [J]. IEEE Photon. Technol. Lett., 2007, 19(6): 417-419.
  • 7Nad-ge Courjal, Blandine Guichardaz, Gwenn Ulliac et al: High aspect ratio lithium niobate ridge waveguides fabricated by optical grade dicing[J]. J. Phys. D: Appl. Phys., 2011, 44(30): 305101.
  • 8Shaomei Zhang, Keming Wang, Xiangzhi Liu et al: Planar and ridge waveguides formed in LiNbOa by proton exchange combined with oxygen ion implantation[J]. Opt. Express, 2010, 18(15) : 15609-15617.
  • 9K. Noguchi, O. Mitomi, H. Miyazawae- al: A broadband T LiNbOa optical modulator with a ridge structure [J]. J Lightwave Technol. , 1995, 13(6) : 1164-1168.
  • 10Kazuto Noguchi, Osamu Mitomi, Hiroshi Miyazawa. Millimeter- wave Ti: LiNbO3 optical modulators[J]. J. Lightwave Technol. , 1998, 16(4): 615-619.

引证文献3

二级引证文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部