摘要
氮化镓作为第三代半导体的代表,具有优越的电学性能。氮化镓的合成制备,对全球半导体产业的发展具有重要意义,目前已经成为世界的研究热点。本文对氮化镓薄膜以及纳米氮化镓的合成制备方法进行了综述,并对各种合成方法的优缺点以及氮化镓的应用前景作了简要分析。
As the representative of the third generation of semiconductor,gallium nitride stands out by its advanced electrical performance.The preparation of gallium nitride has great important meaning to the development of global semiconductor industry,which has been a global research hot spot at present.In this paper,some methods to prepare gallium nitride films and nanostructure gallium nitride were reviewed.In addition,advantages and disadvantages of all the methods above and the prospect of gallium nitride were simply analyzed.
出处
《辽宁化工》
CAS
2011年第11期1201-1203,1206,共4页
Liaoning Chemical Industry
基金
浙江省大学生科技创新项目(新苗人才计划)
项目号:2010R424028
基金编号:31218589
关键词
氮化镓
薄膜
纳米结构
制备
Gallium nitride
Film
Nanostructure
Preparation
