摘要
采用脉冲激光沉积技术在Si(100)衬底上制备了高导电的IrO2薄膜,重点研究了退火前后其电学性能和微观结构的变化规律。采用X射线衍射(XRD)、原子力显微镜(AFM)、光电子能谱(XPS)和四探针法对退火前后IrO2薄膜的结构和电性能进行了表征,并利用霍尔效应研究了IrO2薄膜的导电机理。结果表明:IrO2薄膜在空气中退火后,导电性能得到提高,其中在750℃退火的电阻率达到最小值37μΩ.cm。在25～500℃范围内,IrO2薄膜的高温电阻率随着温度的升高呈线性关系逐渐增大,呈现出类似金属的导电特征。在250～400℃沉积的IrO2薄膜载流子的类型为p型;沉积温度较高(500℃)或在更高温度退火处理后,IrO2薄膜载流子的类型为n型,其导电机理以电子导电为主。
IrO2 thin films were prepared on Si（100） substrates by pulsed laser deposition（PLD） technique.Emphases were given on the variation of the electrical resistivity and microstructure of IrO2 thin films before and after being annealed at air atmosphere.The composition and microstructure of IrO2 thin films were characterized by using x-ray diffraction（XRD）,X-ray photoelectron spectroscopy（XPS）,atomic force microscopy（AFM）,and the four-point probe method was used to measure their electrical resistivity.Hall measurements were used to study the electrical mechanism of IrO2 films.The results show that the annealing in air could improve the conductivity of IrO2 films,and the minimum electrical resistivity of 37 μΩ·cm is obtained at 750 ℃.IrO2 films had a significant positive temperature dependence of resistivity at 25-500 ℃,showing a typical metallic conduction behavior.It is found that IrO2 films deposited at the substrate temperature of 250-400 ℃ exhibited p-type conduction,while the conductivity type changed to n-type when the temperature increased to above 500 ℃.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2011年第10期1790-1794,共5页
Rare Metal Materials and Engineering
基金
湖北省铁电压电材料与器件重点实验室开放基金项目
中央高校基本科研业务费专项资金资助项目(CUGL090221)
关键词
氧化铱薄膜
电性能
导电机理
霍尔效应
IrO2 thin films
conductivity
electrical mechanism
Hall measurements
