摘要
微电极阵列可在彼此独立的电极点上通过改性材料修饰完成多功能集成,是脑机接口的核心部件。使用微电子机械系统(MEMS)工艺结合溅射、剥离工艺将氧化铱薄膜作为pH响应功能层集成在微电极阵列对应的电极点上,同时研究了氧化铱薄膜在微米尺寸进行图形化的可行溅射参数。进行了微观形貌测试、元素表征和pH响应测试,结果表明成功在对应电极点上集成了均匀性良好的氧化铱薄膜,其对于pH的响应性能优异,具有约为56.52 mV/pH的灵敏度,线性相关度约为0.999。这使集成了氧化铱功能层的微电极阵列有望在体内植入的研究中实现对脑区pH值的观测。
The multifunctional integration of the microelectrode array can be completed through the modification of the modified material on independent electrodes, and the microelectrode array is the core component of the brain-computer interface. The micro-electromechanical system(MEMS) technology combined with sputtering and lift-off processes was used to integrate the iridium oxide film as a pH response function layer on the corresponding electrodes of the microelectrode array. Meanwhile, feasible sputtering parameters for the patterning of the iridium oxide film in micron size were investigated. Microscopic morphology test, element characterization and pH response test were carried out. The results show that the iridium oxide film with excellent uniformity is successfully integrated on the corresponding electrodes, and its response performance to pH is excellent. The sensitivity is about 56.52 mV/pH, and the linear correlation is approximately 0.999. This makes the microelectrode array integrated with the iridium oxide functional layer hopeful to observe the pH value of the brain area in the study of the implantation in vivo.
作者
王琛
王隆春
刘景全
Wang Chen;Wang Longchun;Liu Jingquan(National Key Laboratory of Science and Technology on Micro/Nano Fabrication,Shanghai 200240,China;School of Electronic Information unci Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China)
出处
《微纳电子技术》
CAS
北大核心
2021年第5期421-425,457,共6页
Micronanoelectronic Technology
基金
国家重点研发计划资助项目(SQ2020YFB130047)。
