摘要
用脉冲激光沉积法分别在不同电阻率的p型和n型S(i100)衬底上制备了不掺杂ZnO薄膜,相应制成n-ZnO/p-Si和n-ZnO/n-Si异质结器件。利用X射线衍射和原子力显微镜对ZnO薄膜进行的结构和形貌测试表明,薄膜结晶情况良好,具有高度的c轴择优取向,表面颗粒大小、分布均匀。对器件的I-V特性测试表明,在无光条件下,制备的n-ZnO/p-Si异质结漏电流很低,而n-ZnO/n-Si同型异质结漏电流要稍大一些;随衬底电阻率的增大,上述器件的阈值电压变小;器件在光照下的漏电流明显比无光条件下的要大。
Un-doped ZnO films were prepared respectively on p-Si（100） and n-Si（100） substrates with different resistivity by pulsed laser deposition （PLD）,then the n-ZnO/p-Si and n-ZnO/n-Si heterojunctions were accordingly fabricated. The structure and morphology of ZnO films were characterized by X-ray diffraction （XRD） and atomic force microscope （AFM）. The results show that the films crystallize well with high c-axis orientation, and the size and distribution of grains on the surface are uniform. The I-V characteristics of the devices show that the leakage current of the n-ZnO/p-Si heterojunetions is very low under dark condition, by contrast, the leakage current of the n-ZnO/n-Si heterojunctions is larger under the same condition; with the increase of substrate resistivity, the device threshold voltage becomes smaller, and the leakage current is significantly larger under illumination than dark conditions.
出处
《真空》
CAS
北大核心
2011年第5期78-81,共4页
Vacuum
基金
合肥工业大学创新实验资助项目(cxsy10220)
