摘要
用小波极大模统计参量研究了MOSFET器件辐照损伤低频噪声的时间序列.将辐照前后实验测量的低频噪声信号与数值模型产生的噪声信号统计特性相比较,发现nMOSFET和pMOSFET的低频噪声小波极大模统计结果均与随机电报噪声叠加模型数值信号的统计特性相接近.辐照前nMOSFET和pMOSFET的统计结果很接近,以致无法区分;辐照后两种器件的小波极大模分布出现明显差异.根据小波极大模统计量判断,随机电报噪声叠加是nMOSFET和pMOSFET低频噪声的主导产生机制,辐照并没有在器件中引入新的缺陷类型,而是使原有缺陷浓度增大,散射增强,辐照引起的nMOSFET损伤比pMOSFET严重.
Wavelet maxima statistic analysis is applied to the low frequency noise of MOSFETs before and after ionizing radiation.It is found that the wavelet maxima statistics of the low frequency noise both from nMOSFETs and pMOSFETs are similar to the numerical signal generated by RTNs superposition.The discrepancy between the wavelet maxima statistics of nMOSFETs and that of pMOSFETs is quite trivial before ionizing radiation,whereas it becomes much more evident after radiation.Based on the wavelet maxima statistics analysis,it is concluded that the dominant low frequency noise generating mechanisms in both nMOSFETs and pMOSFETs are RTNs superposition.Ionizing radiation does not add new types of defects to the devices,but increase their density.nMOSFETs is damaged more severely than pMOSFETs during radiation.
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
2011年第4期6-10,48,共6页
Journal of Xidian University
基金
国家自然科学基金资助项目(60276028)
