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低温烧结CuO改性PZT压电陶瓷性能研究 被引量:6

Study on the low temperature sintered PZT piezoelectric ceramics by CuO doping
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摘要 为了降低铅基压电陶瓷的烧结温度,采用传统固相法制备了CuO掺杂改性的Pb(Zr0.52Ti0.48)2O3(PZT)二元压电陶瓷。研究了CuO掺杂对所制PZT陶瓷的结构和性能的影响。XRD显示随CuO掺杂量增加,特征峰向低角度移动,SEM显示烧结晶粒先增加后减小,CuO的加入促进了烧结。CuO和PbO生成低共熔物,使PZT陶瓷的烧结温度降至970℃,降低了250℃;掺杂质量分数0.4%的CuO时,PZT陶瓷的综合性能最优:密度为7.65 g/cm3,εr=1 645,tanδ=0.015,d33=260 pC/N,kp=0.44,Qm=1 500。 In order to lower the sintering temperature of Pb-based piezoelectric ceramics,CuO-modified Pb(Zr0.52Ti0.48)2O3 piezoelectric ceramic was prepared by conventional solid phase method.The effects of CuO addition on the structure and properties of prepared PZT ceramics were studied.The XRD results indicate that characteristic peak moves to the low angel as the amount of CuO increasing.SEM results indicate that the grain size increases at first then decreases.The addition of CuO promotes the sintering properties of the ceramics.CuO-PbO eutectic is formed,and the sintering temperature of PZT ceramics is 970 ℃,which is 250 ℃ lower than that of the CuO-free PZT ceramics.The 0.4%(mass fraction) CuO-doped Pb(Zr0.52Ti0.48)2O3 ceramic sintered at 970 ℃ has the optimum properties: the density of PZT ceramics is 7.65 g/cm3,εr=1 645,tan δ=0.015,d33=260 pC/N,kp =0.44 and Qm=1 500.
作者 侯伟 李建华
出处 《电子元件与材料》 CAS CSCD 北大核心 2011年第8期16-19,共4页 Electronic Components And Materials
关键词 压电陶瓷 低温烧结 氧化铜 压电性能 piezoelectric ceramics low temperature sintering CuO piezoelectric properties
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