摘要
通过实验发现,多晶硅片在不同温度下氧化后方块电阻的变化情况不同。温度较高时,氧化后方块电阻降低;温度较低时,氧化后方块电阻升高;单晶硅在任何温度下氧化后方块电阻都是降低的。通过分析认为是多晶硅的结构使其氧化后方块电阻的变化情况与单晶硅不同。
Through the experiment,the results show that the sheet resistance of polycrystalline silicon wafer changes in different ways under different oxidation temperatures.Under high temperature,the sheet resistance of polycrystalline silicon lowers after oxidation;under low temperature,the sheet resistance of polycrystalline silicon rises after oxidation.However,the sheet resistance of monocrystalline silicon always lowers under any temperature.Compared with monocrystalline silicon,it is the special structure of polycrystalline silicon that makes the sheet resistance change in different trends.
出处
《电源技术》
CAS
CSCD
北大核心
2011年第6期670-672,共3页
Chinese Journal of Power Sources
关键词
多晶硅
氧化
方块电阻
变化
polycrystalline silicon
oxidation
sheet resistance
change
