摘要
磷透过热生长氧化层扩散的方法，可以减缓高浓度成结磷扩对硅表层带来的晶格损伤（即“死层”）．双晶Ｘ射线衍射图形和杂质纵向分布测量均证实了这一点．用此方法制备的常规结深的太阳电池，其相对光谱响应在４００～６００ｎｍ波段内平均提高了５０％．在ＡＭＯ（２５℃）条件下，其光电转换效率也从常规电池的１１．８％提高到１２．３％．转换效率可望在工艺最佳化研究后得到进一步提高．
Phosphorus diffusion through thermally grown oxide can alleviate the silicon crystal damage, i. e. the 'dead layer' caused by high concentration diffusion of phosphorus with shallow junction, which can be shown by double-crystal X-ray diffraction and the measurement of concentration profile of phosphorus. Compared with the conventional cells, the relative spectral response in the range of 400～600 nm in wavelength increases by a factor of 50% on average for the cells fabricated with the new approach. Under the condition of AMO (25T)the photo-electric-conversion efficiency of 12.3 % is reached for new cells, which can be further improved by the optimization of process, whereas only 11.8% for convontional cells is reached.
出处
《同济大学学报（自然科学版）》
EI
CAS
CSCD
1995年第1期65-68,共4页
Journal of Tongji University:Natural Science
关键词
硅太阳能电池
太阳能电池
X射线
衍射
光谱响应
Si solar cells
Phosphorus diffusion
Double-crystal X-ray diffraction
Spectral response
