摘要
采用射频磁控溅射法在RB SiC陶瓷基片上制备了无定型Si-C-O-N涂层,利用XPS分析了涂层的组成元素以及相应的结合状态。结果表明:离子轰击对Si、C和N的化学位移影响较大:经过离子轰击后Si-C和Si-N键所占比例上升,而Si-O键则稍有减少;C sp2有所上升,而C-Si键和C-N键则有所下降;N-Si键上升,而N-C键略有下降。溅射功率对涂层组成的影响很大:随着溅射功率的增加,Si元素结合能增加,这主要是溅射产额增加的缘故;而N元素的含量则迅速上升,这主要归因于高溅射功率下N-Si键的增加和更多N-C键的结合。
Si-C-O-N coatings were deposited by RF magnetron sputtering on RB SiC ceramics substrate. The elements of coating and the corresponding bonding status were analyzed by XPS. The results show that. The influence of ion bombardment on Si, C and N chemical displacement is great. The proportions of Si-C and Si-N bondings increase while the proportion of Si-O bonding decreases a little after ion bombardment. The proportion of C sp2 rises and the proportion of C-Si and C-N bondings fall. The proportion of N-Si bonding increase and the proportion of N-C bonding decreases slightly. The influence of sputtering power to the element of coating is rather great： The content of Si increases with the increase of sputtering power. This is attributed to the case that the sputtering productivity raises. The content of N increases rapidly. This ascribes to the increase of N-Si bondings and the binding of more N-C bondings at higher sputtering power.
出处
《中国陶瓷》
CAS
CSCD
北大核心
2011年第6期4-9,共6页
China Ceramics
基金
国家重点基础研究规划(863项目)资助项目(2006AA03Z539)
常州工程职业技术学院2010年度院级科研项目(KJY2010-06)
