摘要
本文对PMOS-DYL 和NMOS-DYL 两种兼容工艺的多值逻辑电路进行了集成化设计和常规工艺投试的探索,并就有关工程化问题进行了讨论,指出了产品化的努力方向.
In this paper we explore the integrateddesign and fabrication technology of Mult-iple-Valued Logic(MVL)circuit with PMOS-DYL and NMOS-DYL two compatible tech-niques.This paper not only presents the exper-iment results,discusses related enginneeingproblems,but also shows the orientation ofproduction.
出处
《微电子学与计算机》
CSCD
北大核心
1990年第11期36-40,共5页
Microelectronics & Computer
关键词
兼容
逻辑电路
集成化
Compatible Technology
Multiple-Valued Logic
Three-Valued Inverter
