摘要
Comparing the theoretical ana1ysis with the experimental results the authors have proved that the uniformity of linear "and/or" gates mainly depends on imput voltage and load resistance. When imput voltage is low, the uniformity changes a little with the load resistance. When imput voltage is high, the smaller the load resistance is, the more obviously the uniformity changes with imput voltage.
Comparing the theoretical ana1ysis with the experimental results the authors have proved that the uniformity of linear 'and/or' gates mainly depends on imput voltage and load resistance. When imput voltage is low, the uniformity changes a little with the load resistance. When imput voltage is high, the smaller the load resistance is, the more obviously the uniformity changes with imput voltage.
出处
《大连理工大学学报》
EI
CAS
CSCD
北大核心
1992年第4期483-488,共6页
Journal of Dalian University of Technology
关键词
逻辑电路
均匀性
误差理论
logic circuits
uniformity
error theory/linear 'and/or' gates
