摘要
研究了一种新的IGBT发射极元胞,并给出其设计方法。该元胞在不影响单位面积有效沟道宽度的情况下,将源衬底的P+区与源N+区并排垂直于沟道一侧放置,以缩短空穴路径。与采用深P+注入抗闩锁的传统方法相比,经过优化设计的新结构的闩锁电流增大了约8倍;在Vce为1.5 V时,单位面积电流密度增加3倍;元胞静态阻断电压也有20%的增加,从而扩展了IGBT的安全工作区,而且工艺更简单。
A novel IGBT cell structure was investigated,and its design method was optimized.The cell structure was designed with P＋ and N＋ region perpendicular to the direction of channel,which shortened the distance of path for hole current to flow,and therefore enhanced its anti latch-up capability.Simulation results showed that,compared to the conventional IGBT cell structure,the optimized new structure had a latch-up current approximately 8 times higher and a current density 3 times larger,for a Vce of 1.5 V.And the breakdown voltage was also increased by 20%,which made the safe operating area of IGBT wider.In addition,the fabrication process for this novel structure was further simplified.
出处
《微电子学》
CAS
CSCD
北大核心
2010年第6期904-907,共4页
Microelectronics
