摘要
室温下采用射频(RF)磁控溅射在玻璃衬底上制备镓铝共掺杂氧化锌(GAZO)薄膜。采用X射线衍射仪、紫外-可见-近红外分光光度计、四探针测试仪和紫外光电子能谱等表征方法研究射频功率和工作压强与薄膜结构、光学和电学性能之间的关联。结果表明:不同条件下制备的GAZO薄膜均具有六方纤锌矿晶体结构,沿垂直衬底的(002)方向择优取向,在可见光波段(400~700 nm)的平均透射率均高于90%;在射频功率和工作压强分别为200 W和0.20 Pa条件下制备的GAZO薄膜具有最低的电阻率(1.40×10^-3Ω·cm)和最高的品质因子(8.10×10^-3Ω^-1)。GAZO薄膜优良的光电性能使其有很大潜力作为透明电极应用于光电器件。
Gallium and aluminum co-doped zinc oxide(GAZO)thin films with high transparency and conductivity were successfully deposited on glass substrates by radio frequency(RF)magnetron sputtering at room temperature.The effects of RF power and working pressure on the structural,optical and electrical characteristics of GAZO thin films were investigated by X-ray diffraction(XRD),UV-Vis-NIR spectrophotometer,four-point-probe setup and ultraviolet photoelectron spectroscopy(UPS).The results show that all GAZO thin films have a hexagonal wurtzite crystal structure with a preferential orientation along(002)direction normal to the substrate,and their average visible transmittance(400-700 nm)are above 90%.The thin films deposited with 200 W and 0.20 Pa yield the lowest resistivity of 1.40×10^-3Ω·cm and highest figure of merit(FOM)of 8.10×10^-3Ω^-1.The optical and electrical characteristics of the deposited GAZO thin films indicate that they have potential applications in optoelectronic devices as transparent electrode.
作者
罗国平
张漫虹
梁铨斌
陈冬
陈星源
李天乐
朱伟玲
LUO Guoping;ZHANG Manhong;LIANG Quanbin;CHEN Dong;CHEN Xingyuan;LI Tianle;ZHU Weiling(School of Science,Guangdong University of Petrochemical Technology,Maoming 525000,China;State Key Laboratory of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510640,China)
出处
《材料导报》
EI
CAS
CSCD
北大核心
2020年第12期12020-12024,共5页
Materials Reports
基金
广东省教育厅青年创新人才(680067)
茂名市科技计划(mm2017000007,2017309)
广东石油化工学院科研基金(2017rc20)。
关键词
射频功率
透明电极
ZNO薄膜
溅射沉积
透射率
电阻率
radio frequency power
transparent electrodes
ZnO thin films
sputtering deposition
transparency
electric resistivity
