摘要
利用双层吸收膜模型，采用消光式椭圆偏振仪，对用ＭＯＣＶＤ方法生长的（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（本征）、（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（掺Ｍｇ）和（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（掺Ｓｉ）３个样品及它们的表面氧化膜的光学参数进行了测量和计算，并对其结果加以讨论．另外还在室温下对（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（本征）表面氧化膜的生长速率及其厚度进行研究。
The optical parameters for three samples of intrinsic,doped Si and doped Mg (Al x Ga 1- x ) yIn 1- y P prepared by the MOCVD on the GaAs substrate were measured by using the null-type ellipsometry and were calculated by the model of double layer absorption film.The results obtained were discussed.The grown rates and thickness of oxide film on the intrinsic (Al x Ga 1- x ) yIn 1- y P surface exposed in the ambient air were studied.A linear dependent of oxide film thickness on the time was obtained.
出处
《山东大学学报（自然科学版）》
CSCD
1999年第2期170-175,共6页
Journal of Shandong University(Natural Science Edition)
