摘要
研究了MOVPE生长的与GaAs晶格匹配的 (AlxGa1-x) 0 .51In0 .4 9P(x =0 .2 9)合金的PL谱的温度依赖关系 ,在变温约为 17～ 2 30K范围内 ,谱线半宽从 2 4meV变到 4 0～ 6 0meV ,强度减小了大约两个数量级。对PL谱积分强度随温度变化的拟合表明 ,在低温区与高温区存在两个不同的激活能。温度小于 90K ,激活能为 4～ 5meV ,温度大于 90K ,激活能为 2 5～ 55meV。认为低温区行为由带边起伏引起的载流子热离化伴随的无辐射跃迁所控制 ,而高温区取决于子晶格的有序度。
The temperature-dependence of PL spectra is applied to investigate (Al x Ga 1- x ) 0.51 In 0.49 P alloys lattice-matched to GaAs and grown by MOVPE.The fitting to the integrated PL intensity shows that there exist two activation energies in two different temperature regions.Below 90 K,the activation energy is about 4～5 meV,whereas the activation energy is about 25～55 meV above 90 K.It is believed that the low temperature PL behaviour is likely to be controlled by non-radiative transition accompanied by carrier thermalization caused by spatial fluctuations of the band edges.The high temperature PL behaviour is suspected to be dominated by a nonradiative path whose characteristic activation energy and transition probability depend upon the degree of sublattice ordering.
出处
《半导体光电》
CAS
CSCD
北大核心
2000年第4期293-295,共3页
Semiconductor Optoelectronics
基金
国家自然科学基金资助项目! (6 9776 0 11)
福建省自然科学基金资助项目
